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You could modify the stated parameters, and Assess it using a "excellent" result which usually takes two hours siumlation time. Based on your conditions, you may accelerate the simulation time.
So can someone be sure to reveal how FET with lower threshold voltage has greater velocity and higher leakage present-day when FET with large threshold will probably be gradual but minimal on power?
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Meaning I must simulate the circuit loads of occasions to have the effects but the issue is that each simulation can take about two several hours and just tends to make the operate pretty slow.
知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
i had same problem with Pictures , cek tat the sample documents operate in typical speed, i cudnt repair the issue totally, try out getting rid of the crystal and Placing mcu velocity at 1Mhz in its Homes
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In the event of lvt, conc. of doping and oxide thickness is a lot more compare to hvt.. And this The explanation that additional the doping, so more speed and much more leakage Assess to hvt.
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Generally this takes place if you externally wire a crystal and so forth. - this introduces a particularly higher velocity oscillator which bottlenecks the simulation and is totally superfluous anyway. Clock frequency is specified as being a click here property of your microcontroller product.